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MSE Seminar: “Aluminum Scandium Nitride Thin Films and Microdevices for Radio Frequency Filters and Magnetoelectric Sensors”
November 30 at 10:30 AM - 12:00 PM
Aluminum Nitride (AlN) is a well-established thin film piezoelectric material. AlN bulk acoustic wave (BAW) radio frequency (RF) filters were one of the key innovations that enabled the 3G and 4G smart phone revolution. Recently, the substitutional doping of scandium (Sc) for aluminum (Al) to form aluminum scandium nitride (AlScN) has been studied to significantly enhance the piezoelectric properties and to introduce ferroelectric properties into AlN based material systems. The properties achieved have profound implications for the performance of future 5G and 6G RF filters, piezoelectric sensors, piezoelectric energy harvesters, and for scaling the bit density of ferroelectric nonvolatile memories (NMV). This talk will present on the synthesis of highly Sc alloyed AlScN materials of the thickness, stress, and crystallinity required for applications in microelectromechanical systems (MEMS). The material properties and device performance achieved will be reported and placed in the context of device specific figures-of-merit. Exemplar AlScN based RF and magnetoelectric sensor devices will be presented and discussed in the context of alternative technologies.
Roy (Troy) Olsson
Associate Professor, Electrical and Systems Engineering, Univesity of Pennsylvania
Roy (Troy) H. Olsson III is an Associate Professor in the Department of Electrical and Systems Engineering at the University of Pennsylvania. He received his Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor in 2004. He was awarded an R&D100 award in 2011 for his work on Microresonator Filters and Frequency References, was named the 2017 DARPA program manager of the year, was the recipient of the NSF CAREER award in 2019, and was awarded the 2022 Bell Labs Prize for his work on Memory Enhanced Computing
with III-Nitride Ferrodiodes.